Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

• Chin-Yi Tsai,
• Jyong-Di Lai,
• Shih-Wei Feng,
• Chien-Jung Huang,
• Chien-Hsun Chen,
• Fann-Wei Yang,
• Hsiang-Chen Wang and
• Li-Wei Tu

Beilstein J. Nanotechnol. 2017, 8, 1939–1945, doi:10.3762/bjnano.8.194

• on both kinetic and thermodynamic factors, leading to a variety of surface morphologies [11][12]. It was reported that three types of textured ZnO thin film, the columnar/polygonal, pyramid-like, and crater-like/pyramidal-tip textured structures, were grown as a front electrode in wafer-based silicon

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

• Kuang-Yang Kou,
• Yu-En Huang,
• Chien-Hsun Chen and
• Shih-Wei Feng

Beilstein J. Nanotechnol. 2016, 7, 75–80, doi:10.3762/bjnano.7.9

• oxide; textured ZnO; Introduction Thin-film solar cells require a transparent conductive oxide (TCO) to allow light to reach the absorber layers and create the electrical current. Due to its superior characteristics, including a wide band gap, high dielectric constant, high exciton binding energy (60

• textured, ZnO@B TCO grown by LPCVD for thin-film solar cell applications is yet to be explored. This study reports the lattice strain relaxation, absorbance, and sheet resistance of textured ZnO TCO@B for solar cell applications. A thicker ZnO@B film enhances the strain relaxation, resulting in an

• relaxation by microcrack formation, is also observed in the ZnO thin film grown by plasma-assisted molecular-beam epitaxy [10]. Therefore, for textured, ZnO@B TCO, the residual strain induced by the lattice mismatch and the difference of thermal expansion coefficient is relaxed, leading to an apparent